(
HIGH-Numerical
Aperture
EUV) A chip lithography method that captures light from wider angles and converges it into a sharper point. High-NA EUV has a wider .55 numerical aperture compared to .33 for standard EUV, and it supports feature sizes down to roughly 8 nm, compared to 13 nm.
Intel Was the First
The Intel fab is the first to use the ASML TWINSCAN EXE:5200B lithography system which uses High-NA EUV. Installed in Intel's Oregon facility in late 2025, it is expected to be used for its upcoming 14A chip process. See
EUV light.